Click to expand full text
HiPerFETTM Power MOSFETs
Q-CLASS
Single MOSFET Die
IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q
VDSS ID25
RDS(on)
= 800 V = 27 A = 300 mW
trr £ 250 ns
PLUS 247TM (IXFX)
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr
G
(TAB) D
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 27 108 27 60 2.5 5 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in.
IXFR27N80Q Datasheet
