IXFR38N80Q2 - Power MOSFET

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IXYS Corporation

Part number	IXFR38N80Q2
Manufacturer	IXYS Corporation
File Size	568.31 KB
Description	Power MOSFET
Datasheet	IXFR38N80Q2 Datasheet
Additional preview pages of the IXFR38N80Q2 datasheet.

W °C °C °C °C V~ V~ z z ISOPLUS247 (IXFR) G D Isolated Back Surface D = Drain G = Gate S = Source z z z Double metal process for low gate resistance Silicon chip on DCB substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800.

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Published: Oct 1, 2005 |