Full PDF Text Transcription for IXBF40N160 (Reference)
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IXBF40N160. For precise diagrams, and layout, please refer to the original PDF.
High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 40N160 IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns 1 5 IGBT Symb...
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60 IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol V CE(sat) VGE(th) ICES IGES td(on) t r td(off) tf C ies QGon VF RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 15/0 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 ± 20 V V 28 A 16 A 40 0.8VCES 250 A W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. I C = 20 A; V GE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = 0.
IXBF40N160 Datasheet
