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High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 40N160
IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns
1 5
IGBT
Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
V CE(sat)
VGE(th) ICES
IGES td(on) t
r
td(off) tf C
ies
QGon VF RthJC
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = 15/0 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C
Maximum Ratings
1600 ± 20
V V
28 A 16 A
40 0.8VCES
250
A W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
I
C
=
20
A;
V GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 2 mA; VGE = VCE
VCE = 0.
IXBF40N160 Datasheet
