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IXFR48N60P - Power MOSFET

Features

  • z TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s VISOL FC Weight 50/60 Hz, RMS, 1 minute Mounting Force International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode z z z Advantages Symbol Test Conditions (T.

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Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 48N60P ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 32 A ≤ 160 mΩ ≤ 250 ns www.DataSheet4U.com (Electrically Isolated Back Surface) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 32 110 32 70 2.0 20 300 -55 ... +150 150 -55 ... +150 300 2500 20..120 / 4.5..26 5 V V V V G ISOPLUS247 (IXFR) E153432 A A A mJ J V/ns W °C °C °C °C V~ N/lb.
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