IXFR48N60P Description
Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 48N60P ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 32 A ≤ 160 mΩ ≤ 250 ns .. (Electrically Isolated Back Surface) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 2500 20..120 / 4.5..26 5 V V V V G ISOPLUS247 (IXFR)...
IXFR48N60P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect Fast intrinsic diode