IXFR64N50P Description
Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 64N50P ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 500 V = 43 A ≤ 100 mΩ ≤ 200 ns .. +150 300 2500 20..120 / 4.5..26 5 V V V V A A A mJ J V/ns W °C °C °C °C V~ z ISOPLUS247 (IXFR) E153432 G D S ISOLATED TAB D = Drain G = Gate S = Source.
IXFR64N50P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect Fast intrinsic diode