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IXFR66N50Q2 - Power MOSFET

Features

  • z z z z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 500 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA V.

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HiPerFETTM Power MOSFETs Q-Class IXFR 66N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 50 264 66 75 4.0 20 500 -55 ... +150 150 -55 ... +150 300 22...130/5...30 5 V V V V A A A mJ J V/ns W °C °C °C °C N/lb g VDSS ID25 RDS(on) trr = = = ≤ www.DataSheet4U.
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