IXFR64N60P - PolarHV HiPerFET Power MOSFET

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IXYS

Part number	IXFR64N60P
Manufacturer	IXYS
File Size	146.91 KB
Description	PolarHV HiPerFET Power MOSFET
Datasheet	IXFR64N60P Datasheet
Additional preview pages of the IXFR64N60P datasheet.

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT , Note 1 TJ = 125°C.

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Published: Jun 12, 2010 |