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Advance Technical Information
PolarHV HiPerFET Power MOSFET
TM
IXFR 64N60P
VDSS ID25
(Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight 50/60 Hz, RMS, 1 minute Mounting force ISOPLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 29 150 64 80 3.5 20 200 -55 ... +150 150 -55 ... +150 2500 22..130/5..29 5 V V V V A A A mJ J V/ns W °C °C °C V~ N/lb g
RDS(on) trr
= = ≤ ≤
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IXFR64N60P Datasheet
