Full PDF Text Transcription for IXFR64N50Q3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFR64N50Q3. For precise diagrams, and layout, please refer to the original PDF.
Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR64N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA ...
View more extracted text
ic Rectifier IXFR64N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute 45 A 160 A 64 A 4 J 50 V/ns 500 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 2500 V Mounting Force 20..120/4.5..27 5 N/lb.
IXFR64N50Q3 Datasheet
