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IXFR64N50Q3 - Power MOSFET

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • Low Intrinsic Gate Resistance.
  • 2500V~ Electrical Isolation.
  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription

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Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR64N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute 45 A 160 A 64 A 4 J 50 V/ns 500 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 2500 V Mounting Force 20..120/4.5..27 5 N/lb.
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