IXFR80N50P Description
Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR 80N50P VDSS ID25 RDS(on) trr = 500 V = 42 A < 72 mΩ < 200 ns .. Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V ISOPLUS247 (IXFR) E153432 G A A A A mJ J V/ns D...
IXFR80N50P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect Fast intrinsic diode