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IXGH16N60C2D1 - IGBT

Key Features

  • z Optimized for Low Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFASTTM IGBTs C2-Class High Speed w/ Diode IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 3.0V 33ns TO-263 AA (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE= 15V, TJ = 125°C, RG = 22Ω Clamped Inductive load TC = 25°C 600 V 600 V ±20 V ±30 V 40 A 16 A 11 A 100 A ICM = 32 A VCE ≤ VCES 150 W -55 ... +150 °C 150 °C -55 ... +150 °C Mounting Torque (TO-220 & TO-247) Mounting Force (TO-263) 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. Maximum Lead Temperature for Soldering 1.6mm (0.062 in.