IXTN58N50 - (IXTN58N50 / IXTN61N50) Power MOSFET

This page provides the datasheet information for the IXTN58N50, a member of the IXTN61N50 (IXTN58N50 / IXTN61N50) Power MOSFET family.

Features

International standard package Isolation voltage 3000V (RMS) Low RDS (on).

IXYS (now Littelfuse)

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IXTN58N50 (IXTN58N50 / IXTN61N50) Power MOSFET by IXYS - Datasheet Preview — Datasheet preview – IXTN58N50

Datasheet Details

Part number	IXTN58N50
Manufacturer	IXYS (now Littelfuse)
File Size	59.40 KB
Description	(IXTN58N50 / IXTN61N50) Power MOSFET
Datasheet	IXTN58N50 Datasheet
Additional preview pages of the IXTN58N50 datasheet.

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Full PDF Text Transcription

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High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ 61 A 75 mΩ Preliminary Data Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL 50/60 Hz, RMS t = 1 minute t = 1s Md Mounting torque Terminal connection torque (M4) Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C Pulse width limited by TJM T C = 25°C -40 ... +150 150 -40 ...

Published: Sep 28, 2013 |