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Preliminary Technical Information
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P
VDSS = ID25 = ≤RDS(on)
800V 1A 14Ω
TO-263 (IXTA)
TO-220 (IXTP)
TO-251 (IXTU)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD Md Weight
G S
(TAB)
GD S
(TAB)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062) from Case for 10s Plastic Body for 10s
Mounting Torque TO-263 TO-220 TO-252 TO-251
(TO-220)
Maximum Ratings 800 800
V V
±20 V ±30 V
1A 2A
1A 75 mJ
5
42
-55 ... +150 150
-55 ... +150
300 260
1.13 / 10 2.50 3.00 0.35 0.
IXTU1N80P Datasheet
