IXFC13N50 Description
+150 300 3 V V V V A A A mJ V/ns W °C °C °C °C g z z z z G D S Isolated back surface G = Gate S = Source.
IXFC13N50 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell