Download IXFC14N80P Datasheet PDF
IXFC14N80P page 2
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IXFC14N80P Description

PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.

IXFC14N80P Key Features

  • High power dissipation
  • Isolated mounting surface
  • 2500V electrical isolation z Low drain to tab capacitance(<30pF)