IXFC15N80Q Description
.. IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS(on) = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns ISOPLUS220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR.
IXFC15N80Q Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) z Rugged polysilicon gate cell structure