IXKC40N60C Description
+125 V V A A A mJ mJ W °C °C °C °C V~ ISOPLUS 220TM G D S Isolated back surface G = Gate, S = Source Patent pending D = Drain, TC = 25°C.
IXKC40N60C Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation 2ND generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS) Low thermal resistance due to reduced chip thickness Low drain t