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KTD1945 - Silicon NPN Power Transistors

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Part number KTD1945
Manufacturer Inchange Semiconductor
File Size 214.99 KB
Description Silicon NPN Power Transistors
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Description

Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 2A High Collector Power Dissipation- : PC= 25W(Max) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Cont

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