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KTD1945 - Silicon NPN Power Transistors

General Description

Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 2A High Collector Power Dissipation- : PC= 25W(Max) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 2A ·High Collector Power Dissipation- : PC= 25W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTD1945 isc website：www.iscsemi.