Datasheet Details
| Part number | KTD1945 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.99 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTD1945-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KTD1945 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.99 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTD1945-InchangeSemiconductor.pdf |
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·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 2A ·High Collector Power Dissipation- : PC= 25W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTD1945 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ;
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