2SD1157 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : MAX UNIT 5.0 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1157 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.