IPB80P03P3L-04
IPB80P03P3L-04 is Power-Transistor manufactured by Infineon.
Feature
- P-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
-30 4 -80
P- TO220 -3-1
V mΩ A
- Enhancement mode
- Logic Level
- Automotive AEC Q101 qualified
- Green package (lead free)
- MSL1 up to 260°C peak reflow temperature
- 175°C operating temperature
- Avalanche rated
- dv/dt rated Type IPP80P03P3L-04 IPB80P03P3L-04 IPI80P03P3L-04 Package Ordering Code
Drain pin 2
Marking 3P03L04 3P03L04 3P03L04 Value -80 -80
Gate pin1 Source pin 3
P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
- Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous ..
TC=25°C TC=100°C
Unit A drain current 1)
Pulsed drain current
TC=25°C
I D puls EAS dv/dt VGS Ptot T j , T stg
-320 432 -6 ±20 200 -55... +175 55/175/56 m J k V/µs V W °C
Avalanche energy, single pulse
ID=-80 A , VDD=-25V, RGS=25Ω
Reverse diode dv/dt
IS=-80A, VDS=-24V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2004-03-04
Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04
Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- case Thermal resistance, junction
- ambient, leaded SMD version, device on...