• Part: IPB80P03P3L-04
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 257.73 KB
Download IPB80P03P3L-04 Datasheet PDF
Infineon
IPB80P03P3L-04
IPB80P03P3L-04 is Power-Transistor manufactured by Infineon.
Feature - P-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 -30 4 -80 P- TO220 -3-1 V mΩ A - Enhancement mode - Logic Level - Automotive AEC Q101 qualified - Green package (lead free) - MSL1 up to 260°C peak reflow temperature - 175°C operating temperature - Avalanche rated - dv/dt rated Type IPP80P03P3L-04 IPB80P03P3L-04 IPI80P03P3L-04 Package Ordering Code Drain pin 2 Marking 3P03L04 3P03L04 3P03L04 Value -80 -80 Gate pin1 Source pin 3 P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous .. TC=25°C TC=100°C Unit A drain current 1) Pulsed drain current TC=25°C I D puls EAS dv/dt VGS Ptot T j , T stg -320 432 -6 ±20 200 -55... +175 55/175/56 m J k V/µs V W °C Avalanche energy, single pulse ID=-80 A , VDD=-25V, RGS=25Ω Reverse diode dv/dt IS=-80A, VDS=-24V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2004-03-04 Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on...