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SIGC08T60R3 - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2004 All Rights

Key Features

  • 600V Trench & Field Stop technology.
  • low VCE(sat).
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling 3 This chip is used for:.
  • power module C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SIGC100T60R3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC100T60R3 VCE 600V ICn 200A Die Size 9.73 x 10.23 mm2 Package sawn on foil Ordering Code Q67050A4345-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 9.73 x 10.23 ( 4.256 x 1.938 ) x 4 ( 4.256 x 2.356 ) x 4 1.615 x 0.817 99.5 / 80.