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SIGC100T60R3
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
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This chip is used for: • power module
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Applications: • drives
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E
Chip Type SIGC100T60R3
VCE 600V
ICn 200A
Die Size 9.73 x 10.23 mm2
Package sawn on foil
Ordering Code Q67050A4345-A101
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 9.73 x 10.23 ( 4.256 x 1.938 ) x 4 ( 4.256 x 2.356 ) x 4 1.615 x 0.817 99.5 / 80.
SIGC08T60R3 Datasheet
