• Part: SPB80N06S2L-H5
  • Description: OptiMOS Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 311.12 KB
Download SPB80N06S2L-H5 Datasheet PDF
Infineon
SPB80N06S2L-H5
SPB80N06S2L-H5 is OptiMOS Power-Transistor manufactured by Infineon.
eature - N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 5 80 P- TO220 -3-1 V mΩ A - Enhancement mode - 175°C operating temperature - dv/dt rated Type SPP80N06S2L-H5 SPB80N06S2L-H5 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6054 Q67060-S6055 Marking 2N06LH5 2N06LH5 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 80 80 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot T j , Tstg 320 700 6 ±20 300 -55... +175 55/175/56 m J k V/µs V W °C Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page...