Datasheet Details
| Part number | 1EDI3030AS |
|---|---|
| Manufacturer | Infineon |
| File Size | 0.96 MB |
| Description | Single channel isolated SiC-MOSFET driver |
| Datasheet |
 1EDI3030AS Datasheet
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General Description
The EiceDRIVER™ gate driver 1EDI3030AS is a high-voltage SiC-MOSFET driver designed for automotive motor drives above 5 kW.
The device is based on Infineon’s coreless transformer (CT) technology, providing galvanic insulation between low voltage and high voltage domains.
Key Features
- Single channel isolated SiC driver using coreless transformer technology.
- For SiC-MOSFETs up to 1200 V.
- CMTI up to 150 V/ns at 1000 V.
- Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17) : 2021-10.
- 5.7 kV rms insulation according to UL 1577.
- Min. 12 A peak current rail-to-rail output.
- Propagation delay 60 ns typical.
- Typ. 10 A integrated Active Miller Clamp supports unipolar switching.
- In.