1EDI3030AS Overview
The EiceDRIVER™ gate driver 1EDI3030AS is a high-voltage SiC-MOSFET driver designed for automotive motor drives above 5 kW. The device is based on Infineon’s coreless transformer (CT) technology, providing galvanic insulation between low voltage and high voltage domains. The device has been designed to support 400 V, 600 V and 1200 V SiC-MOSFET technologies.
1EDI3030AS Key Features
- Single channel isolated SiC driver using coreless transformer technology
- For SiC-MOSFETs up to 1200 V
- CMTI up to 150 V/ns at 1000 V
- Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE
- 5.7 kV rms insulation according to UL 1577
- Min. 12 A peak current rail-to-rail output
- Propagation delay 60 ns typical
- Typ. 10 A integrated Active Miller Clamp supports unipolar switching
- Integrated ADC for temperature measurement
- Integrated safety features to support ASIL B(D)
1EDI3030AS Applications
- Traction inverters for HEV and EV
- Auxiliary inverters for HEV and EV