Datasheet4U.com

1EDI3030AS - Single channel isolated SiC-MOSFET driver

Product Overview

Infineon

📥 Download Datasheet

1EDI3030AS Single channel isolated SiC-MOSFET driver by Infineon - Datasheet Preview — Datasheet preview – 1EDI3030AS

Datasheet Details

Part number	1EDI3030AS
Manufacturer	Infineon
File Size	0.96 MB
Description	Single channel isolated SiC-MOSFET driver
Datasheet	1EDI3030AS Datasheet
Additional preview pages of the 1EDI3030AS datasheet.

Product details

Description

The EiceDRIVER™ gate driver 1EDI3030AS is a high-voltage SiC-MOSFET driver designed for automotive motor drives above 5 kW.

Features

Single channel isolated SiC driver using coreless transformer technology.
For SiC-MOSFETs up to 1200 V.
CMTI up to 150 V/ns at 1000 V.
Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17) : 2021-10.
5.7 kV rms insulation according to UL 1577.
Min. 12 A peak current rail-to-rail output.
Propagation delay 60 ns typical.
Typ. 10 A integrated Active Miller Clamp supports unipolar switching.
In.

📁 Similar Datasheet

Other Datasheets by Infineon

1EDI3031AS - Single channel isolated SiC-MOSFET driver
1EDI3033AS - Single channel isolated SiC-MOSFET driver
1EDI3035AS - Single channel isolated SiC-MOSFET driver
1EDI3050AS - Single channel isolated IGBT/SiC-MOSFET driver
1EDI3051AS - Single channel isolated IGBT/SiC-MOSFET driver
1EDI30I12MF - Single Channel IGBT Gate Driver

Published: Apr 16, 2025 |