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1EDI3031AS - Single channel isolated SiC-MOSFET driver

Description

The EiceDRIVER™ gate driver 1EDI3031AS is a high-voltage SiC-MOSFET driver designed for automotive motor drives above 5 kW.

The device is based on Infineon’s coreless transformer (CT) technology, providing galvanic insulation between low voltage and high voltage domains.

Features

  • Single channel isolated SiC driver using coreless transformer technology.
  • For SiC-MOSFETs up to 1200 V.
  • CMTI up to 150 V/ns at 1000 V.
  • Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17) : 2021-10.
  • 5.7 kV rms insulation according to UL 1577.
  • Min. 12 A peak current rail-to-rail output.
  • Propagation delay 60 ns typical.
  • Typ. 10 A integrated Active Miller Clamp supports unipolar switching.
  • AS.

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Datasheet Details

Part number 1EDI3031AS
Manufacturer Infineon
File Size 912.86 KB
Description Single channel isolated SiC-MOSFET driver
Datasheet download datasheet 1EDI3031AS Datasheet
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EiceDRIVER™ gate driver 1EDI3031AS Single channel isolated SiC-MOSFET driver Features • Single channel isolated SiC driver using coreless transformer technology • For SiC-MOSFETs up to 1200 V • CMTI up to 150 V/ns at 1000 V • Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17) : 2021-10 • 5.7 kV rms insulation according to UL 1577 • Min. 12 A peak current rail-to-rail output • Propagation delay 60 ns typical • Typ.
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