Datasheet Summary
EiceDRIVER™ gate driver 1EDI3031AS
Single channel isolated SiC-MOSFET driver
Features
- Single channel isolated SiC driver using coreless transformer technology
- For SiC-MOSFETs up to 1200 V
- CMTI up to 150 V/ns at 1000 V
- Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE
0884-17) : 2021-10
- 5.7 kV rms insulation according to UL 1577
- Min. 12 A peak current rail-to-rail output
- Propagation delay 60 ns typical
- Typ. 10 A integrated Active Miller Clamp supports unipolar switching
- ASC pin for PMSM motor drive application
- Integrated safety Features to support ASIL B(D):
- Redundant DESAT and OCP protection
- Gate and output stage monitoring
- Shoot-through...