Datasheet Details
| Part number | 1EDI3050AS |
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| Manufacturer | Infineon |
| File Size | 1.70 MB |
| Description | Single channel isolated IGBT/SiC-MOSFET driver |
| Datasheet |
 1EDI3050AS Datasheet
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General Description
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Key Features
- Single channel isolated IGBT/SiC driver using coreless transformer technology.
- For IGBTs/SiC-MOSFETs up to 1200 V.
- Integrated SPI.
- CMTI up to 150 V/ns up to 1000 V.
- Reinforced isolation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10.
- 5.7 kVrms insulation according to UL 1577.
- Integrated booster with up to 20 A peak current rail-to-rail split output.
- Single monitoring/clamping for driving a single power dev.