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1EDI3050AS - Single channel isolated IGBT/SiC-MOSFET driver

Description

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Features

  • Single channel isolated IGBT/SiC driver using coreless transformer technology.
  • For IGBTs/SiC-MOSFETs up to 1200 V.
  • Integrated SPI.
  • CMTI up to 150 V/ns up to 1000 V.
  • Reinforced isolation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10.
  • 5.7 kVrms insulation according to UL 1577.
  • Integrated booster with up to 20 A peak current rail-to-rail split output.
  • Single monitoring/clamping for driving a single power dev.

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Datasheet Details

Part number 1EDI3050AS
Manufacturer Infineon
File Size 1.70 MB
Description Single channel isolated IGBT/SiC-MOSFET driver
Datasheet download datasheet 1EDI3050AS Datasheet
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EiceDRIVER™ gate driver 1EDI3050AS Single channel isolated IGBT/SiC-MOSFET driver Features • Single channel isolated IGBT/SiC driver using coreless transformer technology • For IGBTs/SiC-MOSFETs up to 1200 V • Integrated SPI • CMTI up to 150 V/ns up to 1000 V • Reinforced isolation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10 • 5.
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