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1EDI3050AS - Single channel isolated IGBT/SiC-MOSFET driver

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Infineon

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1EDI3050AS Single channel isolated IGBT/SiC-MOSFET driver by Infineon - Datasheet Preview — Datasheet preview – 1EDI3050AS

Datasheet Details

Part number	1EDI3050AS
Manufacturer	Infineon
File Size	1.70 MB
Description	Single channel isolated IGBT/SiC-MOSFET driver
Datasheet	1EDI3050AS Datasheet
Additional preview pages of the 1EDI3050AS datasheet.

Product details

Description

. . .8 Pin definitions and functions

Features

Single channel isolated IGBT/SiC driver using coreless transformer technology.
For IGBTs/SiC-MOSFETs up to 1200 V.
Integrated SPI.
CMTI up to 150 V/ns up to 1000 V.
Reinforced isolation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10.
5.7 kVrms insulation according to UL 1577.
Integrated booster with up to 20 A peak current rail-to-rail split output.
Single monitoring/clamping for driving a single power dev.

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Published: May 5, 2025 |