1EDI3050AS Overview
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1EDI3050AS Key Features
- Single channel isolated IGBT/SiC driver using coreless transformer technology
- For IGBTs/SiC-MOSFETs up to 1200 V
- Integrated SPI
- CMTI up to 150 V/ns up to 1000 V
- Reinforced isolation 8 kV peak according to DIN EN IEC 60747-17 (VDE
- 5.7 kVrms insulation according to UL 1577
- Integrated booster with up to 20 A peak current rail-to-rail split output
- Single monitoring/clamping for driving a single power device
- Integrated flyback controller
- Safety inputs for primary ASC trigger and PWM control
1EDI3050AS Applications
- Traction inverters for HEV and EV