1EDI3035AS Description
Description The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage galvanic isolated SiC-MOSFET driver designed for high voltage automotive applications. The device is based on Infineon’s coreless transformer (CT) technology providing 8 kV galvanic insulation between low voltage and high voltage domains. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2...
1EDI3035AS Key Features
- Galvanic isolated SiC-MOSFET driver using coreless transformer technology
- Single channel driver for SiC-MOSFETs up to 1200 V
- Low propagation delay 60 ns typically
- Split outputs TON and TOFF for independent turn-on and turn-off slew
- Integrated booster with up to 20 A peak current rail-to-rail output
- Integrated active Miller clamp supports unipolar switching
- Configurable external soft turn-off functionality
- 12- bit ADC for temperature measurement or DC link measurement
- CMTI up to 150 V/ns up to ±1200 V
- Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17
1EDI3035AS Applications
- Traction inverters for HEV and EV using SiC or SiC + IGBT fusion technology
- Auxiliary inverters for HEV and EV using SiC or SiC + IGBT fusion technology