Datasheet Summary
EiceDRIVER™ gate driver 1EDI3035AS
Single channel isolated SiC-MOSFET driver
Features
- Galvanic isolated SiC-MOSFET driver using coreless transformer technology
- Single channel driver for SiC-MOSFETs up to 1200 V
- Low propagation delay 60 ns typically
- Split outputs TON and TOFF for independent turn-on and turn-off slew rates
- Integrated booster with up to 20 A peak current rail-to-rail output
- Integrated active Miller clamp supports unipolar switching
- Configurable external soft turn-off functionality
- 12- bit ADC for temperature measurement or DC link measurement
- CMTI up to 150 V/ns up to ±1200 V
- Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17
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