2ED2304S06F - 650V Half Bridge Gate Driver

Product Overview

Infineon

Part number	2ED2304S06F
Manufacturer	Infineon
File Size	633.35 KB
Description	650V Half Bridge Gate Driver
Datasheet	2ED2304S06F Datasheet
Additional preview pages of the 2ED2304S06F datasheet.

The 2ED2304S06F is a 650-V half-bridge gate driver.

Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity.

The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V.

Infineon thin-film-SOI-technology.
Fully operational to +650 V.
Floating channel designed for bootstrap operation.
Output source/sink current capability +0.36 A/-0.7 A.
Integrated Ultra-fast, low RDS(ON) Bootstrap Diode.
Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology.
10 ns typ. , 60 ns max. propagation delay matching.
dV/dt immune ±50 V.
Gate drive supply rang.

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Published: Apr 10, 2020 |