Description
The 2ED2388S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Features
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
- Negative VS transient immunity of -100 V.
- Floating channel designed for bootstrap operation.
- Operating voltages (VS node) upto + 650 V.
- Maximum bootstrap voltage (VB node) of + 675 V.
- Integrated ultra-fast, low resistance bootstrap diode.
- 100 ns dead-time with integrated shoot-through prevention logic.
- Logic operational up to.
- 11 V on VS Pin.
2ED2388S06F Datasheet
