Download the AUIRFSL3207Z datasheet PDF.
This datasheet also covers the AUIRFS3207Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
AUIRFS3207Z AUIRFSL3207Z
HEXFET® Power MOSFET
D
G S.
Note: The manufacturer provides a single datasheet file (AUIRFS3207Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRFSL3207Z (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRFSL3207Z. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE PD - 96403A Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Al...
View more extracted text
nce 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRFS3207Z AUIRFSL3207Z HEXFET® Power MOSFET D G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive ap
More Datasheets from International Rectifier (now Infineon)
AUIRFSL3207Z Datasheet
