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AUIRFSL3307Z - Power MOSFET

Download the AUIRFSL3307Z datasheet PDF. This datasheet also covers the AUIRFS3307Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l AUIRFS3307Z AUIRFSL3307Z HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D 75V 4.6mΩ 5.8mΩ 128A 120A c.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFS3307Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AUIRFSL3307Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFSL3307Z. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE PD - 96404A Features l l l l l l l AUIRFS3307Z AUIRFSL3307Z HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Te...

View more extracted text
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D 75V 4.6mΩ 5.8mΩ 128A 120A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

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