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IRF6727MPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96122 IRF6727MPbF IRF6727MTRPbF l l l l l l l l l l RoHS pliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling patible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses patible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) RDS(on) VDSS VGS 30V max ±20V max 1.22mΩ@ 10V 1.84mΩ@ 4.5V Qg tot Qgd 16nC Qgs2 5.3nC Qrr 45nC Qoss 28nC Vgs(th) 1.8V 49nC MX MT MP DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.

General Description

The IRF6727MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • 1 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 200 180 160 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 100µA ID = 150µA ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 250µA 1.0 1.5 Fig 12. Maximum Drain Current vs. Case Temperature 100.

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