Description
The IRF6727MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- 1 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
200 180 160
ID, Drain Current (A)
Fig11. Maximum Safe Operating Area
3.0
2.5
140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0 ID = 100µA ID = 150µA ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 250µA 1.0
1.5
Fig 12. Maximum Drain Current vs. Case Temperature
100.
IRF6727MTRPBF Datasheet
