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IRF7474 - HEXFET Power MOSFET

Datasheet Summary

Features

  • When mounted on 1 inch square copper board … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS † ISD ≤ 2.7A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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PD- 94097 IRF7474 HEXFET® Power MOSFET Applications Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterruptible Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current l VDSS 100V RDS(on) max 63mΩ@VGS = 10V ID 4.
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