When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 2.7A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.
Full PDF Text Transcription for IRF7474 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRF7474. For precise diagrams, and layout, please refer to the original PDF.
PD- 94097 IRF7474 HEXFET® Power MOSFET Applications Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterruptible Power Supply Benefits l Low O...
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erters l Motor Control l Uninterruptible Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current l VDSS 100V RDS(on) max 63mΩ@VGS = 10V ID 4.
More Datasheets from International Rectifier (now Infineon)
IRF7474 Datasheet
