IRG4IBC10UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Product Overview

International Rectifier

Part number	IRG4IBC10UD
Manufacturer	International Rectifier
File Size	199.12 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Datasheet	IRG4IBC10UD Datasheet
Additional preview pages of the IRG4IBC10UD datasheet.

UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
IGBT co-packaged with.

Other Datasheets by International Rectifier

IRG4IBC20FDPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20KD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC20KDPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC20UDPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20W - INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20WPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC30FD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Published: Nov 24, 2005 |