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IRG4IBC10UD Datasheet INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Manufacturer: International Rectifier (now Infineon)

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IRG4IBC10UD insulated gate bipolar transistor with ultrafast soft recovery diode by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4IBC10UD
Manufacturer	International Rectifier (now Infineon)
File Size	199.12 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Datasheet	IRG4IBC10UD Datasheet

Overview

PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 600V VCE(on) typ.

= 2.

Key Features

UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
IGBT co-packaged with.

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