40P03 - P-Channel enhancement mode power field effect transistors

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V,-30A, RDS(ON) =13mΩ@VGS = -10V.
Fast switching.
Green Device Available PDFN3x3 Pin Configuration D DDDD S S SG G S.

📥 Download Datasheet

40P03 p-channel enhancement mode power field effect transistors by JINGAO - Datasheet Preview

Datasheet Details

Part number	40P03
Manufacturer	JINGAO
File Size	1.19 MB
Description	P-Channel enhancement mode power field effect transistors
Datasheet	40P03 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
40P03	P-Channel Enhancement MOSFET	Kexin
40P03	30V P-Channel MOSFET	VBsemi
40P03	P-Ch 30V Fast Switching MOSFET	XUANXINWEI
40P03DL	P-CHANNEL MOSFET	PINGWEI
40P03GI	AP40P03GI	Advanced Power Electronics

Other Datasheets by JINGAO

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.