JINGAO 40P03
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | 40P03 |
|---|---|
| Datasheet | 40P03 Download |
| Manufacturer | JINGAO |
| Description | P-Channel enhancement mode power field effect transistors |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. 40N03 BVDSS -30V RDSON 13m ID -30AFEATURES
● -30V,-30A, RDS(ON) =13mΩ@VGS = -10V● Fast switching
● Green Device Available PDFN3x3 Pin Configuration D DDDD S S SG G S
APPLICATIONS
● MB / VGA / Vcore● POL
APPLICATIONS
● Load Switch● LED Application
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating -30 ±20 -30 -17 -120 27 0.22 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA RθJC Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Typ. ----- Max. 62 4.6 Unit ℃/W ℃/W JINGAO Technology Co., Ltd.
