40P03 Datasheet and Specifications PDF

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio.

* -30V,-30A, RDS(ON) =13mΩ@VGS = -10V
* Fast switching
* Green Device Available PDFN3x3 Pin Configuration D DDDD S S SG G S Applications
* MB / VGA / Vcore
* POL Applications
* Load Switch
* LED Application Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ.

40P03-VB PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration TO-220AB 40P03-VB Datasheet P-Channel 30-V (D-S) MOSFET -30 V 8 mΩ 11 mΩ -70 A Single FEATURES • Halogen.

* Halogen-free
* Trench Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested APPLICATIONS
* Load Switch
* Notebook Adaptor Switch S G RoHS COMPLIANT GD S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage.

The 40P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The 40P03 meet the RoHS and Green Produ.

Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Rating 10s Steady State -30 ±20 -40 -25 -13.4 -8.5 -10.7 -6.

SDMIPDTTyyppee P-Channel Enhancement MOSFET 40P03 MOSFIECT Features VDS (V) =-30V,ID =-30 A RDS(ON) 28m (VGS =-10V) RDS(ON) 50m (VGS =-4.5V) (1.70) 1.30 ±0.10 2.80 ±0.10 TO-220 9.90 ±0.20 (8.70).

VDS (V) =-30V,ID =-30 A RDS(ON) 28m (VGS =-10V) RDS(ON) 50m (VGS =-4.5V) (1.70) 1.30 ±0.10 2.80 ±0.10 TO-220 9.90 ±0.20 (8.70) ø3.60 ±0.10 4.50 ±0.20 1.30 +0.10
*0.05 (3.00) (3.70) 15.90 ±0.20 18.95MAX. 9.20 ±0.20 (1.46) (45°) 10.08 ±0.30 13.08 ±0.20 (1.00) D G S 1.27 ±0.10 1.52 ±0.10.