Kexin Electronics 40P03
P-Channel Enhancement MOSFET
| Part No. | 40P03 |
|---|---|
| Datasheet | 40P03 Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
VDS (V) =-30V,ID =-30 A RDS(ON) 28m (VGS =-10V) RDS(ON) 50m (VGS =-4.5V) (1.70) 1.30 ±0.10 2.80 ±0.10 TO-220 9.90 ±0.20 (8.70) ø3.60 ±0.10 4.50 ±0.20 1.30 +0.10 –0.05 (3.00) (3.70) 15.90 ±0.20 18.95MAX. 9.20 ±0.20 (1.46) (45°) 10.08 ±0.30 13.08 ±0.20 (1.00) D G S 1.27 ±0.10 1.52 ±0.10 123 2.54TYP [2.54 ±0.20] 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.00 ±0.20 0.50 +0.10 –0.05 2.40 ±0.20 1 GATE 2 DRAIN 3 SOURCEABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Sy mb ol Rating Unit Drain-Source Voltage Gate-Source Voltage VD S -30 V VG S Continuous Drain Current TC=25 ID TC=100 -30 -18 A Pulsed Drain Current I DM -120 Power Dissipation PD 31 .3 W Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case RthJA 110 /W Rthc 4 Junction and Storage Temperature Range TJ , TSTG -55 to 150 1 SDMIPDTTyyppee MOSFIECT 40P03ELECTRICAL CHARACTERISTICS
Ta = 25 P ara me ter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Sta...
