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40P03 - P-Channel Enhancement MOSFET

Key Features

  • VDS (V) =-30V,ID =-30 A RDS(ON) 28m (VGS =-10V) RDS(ON) 50m (VGS =-4.5V) (1.70) 1.30 ±0.10 2.80 ±0.10 TO-220 9.90 ±0.20 (8.70) ø3.60 ±0.10 4.50 ±0.20 1.30 +0.10.
  • 0.05 (3.00) (3.70) 15.90 ±0.20 18.95MAX. 9.20 ±0.20 (1.46) (45°) 10.08 ±0.30 13.08 ±0.20 (1.00) D G S 1.27 ±0.10 1.52 ±0.10 123 2.54TYP [2.54 ±0.20] 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.00 ±0.20 0.50 +0.10.
  • 0.05 2.40 ±0.20 1 GATE 2 DRAIN 3 SOURCE Absolute Maximum Ratings Ta = 25 Parameter Sy mb ol.

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SDMIPDTTyyppee P-Channel Enhancement MOSFET 40P03 MOSFIECT Features VDS (V) =-30V,ID =-30 A RDS(ON) 28m (VGS =-10V) RDS(ON) 50m (VGS =-4.5V) (1.70) 1.30 ±0.10 2.80 ±0.10 TO-220 9.90 ±0.20 (8.70) ø3.60 ±0.10 4.50 ±0.20 1.30 +0.10 –0.05 (3.00) (3.70) 15.90 ±0.20 18.95MAX. 9.20 ±0.20 (1.46) (45°) 10.08 ±0.30 13.08 ±0.20 (1.00) D G S 1.27 ±0.10 1.52 ±0.10 123 2.54TYP [2.54 ±0.20] 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.00 ±0.20 0.50 +0.10 –0.05 2.40 ±0.20 1 GATE 2 DRAIN 3 SOURCE Absolute Maximum Ratings Ta = 25 Parameter Sy mb ol Rating Unit Drain-Source Voltage Gate-Source Voltage VD S -30 V VG S Continuous Drain Current TC=25 ID TC=100 -30 -18 A Pulsed Drain Current I DM -120 Power Dissipation PD 31 .3 W Thermal Resistance.