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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Small Package : USC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance.
2 D
KDS4148U
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B 1
G
K
A
H
E
J C I
DIM
MAXIMUM RATING (Ta=25 CHARACTERISTIC
) SYMBOL VRM VR IFM IO IFSM PD* Tj Tstg , RATING 100 75 450 150 2 200 150 -55¡- 150 ¡É UNIT V V mA mA A mW ¡É
M M
A B C D E F G H I J K L M
MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + 2 +4/-2 4~6
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range
1.