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MJD112L - EPITAXIAL PLANAR NPN TRANSISTOR

Download the MJD112L datasheet PDF. This datasheet also covers the MJD112 variant, as both devices belong to the same epitaxial planar npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJD112-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJD112L
Manufacturer KEC
File Size 391.48 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet MJD112L Datasheet

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Other Datasheets by KEC

Part Number Description
MJD112 EPITAXIAL PLANAR NPN TRANSISTOR
MJD117 EPITAXIAL PLANAR PNP TRANSISTOR
MJD117L EPITAXIAL PLANAR PNP TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 2 4 50 1.3 20 150 -55 150 UNIT V V V A mA W C B Q A C K H F F 1 2 3 1. BASE 2. COLLECTOR 3.