MJD112L Overview
SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
MJD112L Key Features
- 55 150
- TYP. MAX
- SINGLE NONREPETIVE
MJD112L datasheet by KEC.
| Part number | MJD112L |
|---|---|
| Datasheet | MJD112L MJD112 Datasheet (PDF) |
| File Size | 391.48 KB |
| Manufacturer | KEC |
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
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SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD112 | Silicon NPN epitaxial planer Transistors | MCC |
| MJD112 | Silicon NPN Power Transistor | Inchange Semiconductor | |
| MJD112 | NPN Silicon Darlington Transistor | Fairchild Semiconductor |