2N60 Datasheet | Kexin Semiconductor

Features RDS(ON) = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 n C). Low Crss ( typical 5.0 p F). Fast switching capability. Avalanche energy specified Improved dv/dt capability. N-Channel MOSFET 2N60 TO-220 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDSS Gate-Source Voltage Drain Current - Continuous (TC = 25 ) ----------------- Continuous (TC = 100 ) Drain Current - Pulsed - 1 VGSS ID IDP 30 2.0 1.26 8.0 Single Pulsed Avalanche Energy - 2 Avalanche Current - 1 Repetitive Avalanche Energy - 1 Peak Diode Recovery dv/dt - 3 Power Dissipation (TC = 25 ) -------- Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds dv/dt PD TJ, Tstg TL 4.5 44 0.36 -55 to +150 Thermal Resistance, Junction-to-Case RèJC Thermal Resistance, Junction-to-Ambient RèJA - 1. Repetitive Rating : Pulse width limited by maximum junction...