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2N60 - N-Channel MOSFET

Key Features

  • RDS(ON) = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. Avalanche energy specified Improved dv/dt capability. N-Channel MOSFET 2N60 TO-220 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDSS 600 Gate-Source Voltage Drain Current - Continuous (TC = 25 ) ----------------- Continuous (TC = 100 ) Drain Current - Pulsed.
  • 1 VGSS ID IDP 30 2.0 1.26 8.0 Single Pulsed Avala.

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SDMIPDTTypypee MOSFIECT Features RDS(ON) = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. Avalanche energy specified Improved dv/dt capability. N-Channel MOSFET 2N60 TO-220 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDSS 600 Gate-Source Voltage Drain Current - Continuous (TC = 25 ) ----------------- Continuous (TC = 100 ) Drain Current - Pulsed * 1 VGSS ID IDP 30 2.0 1.26 8.0 Single Pulsed Avalanche Energy * 2 EAS 140 Avalanche Current * 1 IAR 2.0 Repetitive Avalanche Energy * 1 EAR 4.