Kexin Electronics 2N60
N-Channel MOSFET
| Part No. | 2N60 |
|---|---|
| Datasheet | 2N60 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
RDS(ON) = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. Avalanche energy specified Improved dv/dt capability. N-Channel MOSFET 2N60 TO-220 1 Gate 2 Drain 3 SourceABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDSS 600 Gate-Source Voltage Drain Current - Continuous (TC = 25 ) ----------------- Continuous (TC = 100 ) Drain Current - Pulsed * 1 VGSS ID IDP 30 2.0 1.26 8.0 Single Pulsed Avalanche Energy * 2 EAS 140 Avalanche Current * 1 IAR 2.0 Repetitive Avalanche Energy * 1 EAR 4.5 Peak Diode Recovery dv/dt * 3 Power Dissipation (TC = 25 ) -------- Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds dv/dt PD TJ, Tstg TL 4.5 44 0.36 -55 to +150 300 Thermal Resistance, Junction-to-Case RèJC 4 Thermal Resistance, Junction-to-Ambient RèJA 54 * 1. Repetitive Rating : Pulse width limited by maximum junction temperature. * 2.