2SJ9435 Datasheet | Kexin Semiconductor

Features - VDS (V) =-30V - ID =-4.2 A - RDS(ON) ＜ 50mΩ (VGS =-10V) - RDS(ON) ＜ 90mΩ (VGS =-4.5V) 1.Gate 2.Drain 3.Source 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings (Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1, 2) Power Dissipation Thermal Resistance.Junction- to-Ambient (Note 3) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD Rth JA TJ Tstg Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300µs , duty cycle ≤2%. 3: Surface mounted on 1 in 2 copper pad of FR4 board, t ≤10s. Rating -30 ±20 -4.2 -20 1.25 100 150 -55 to 150 Unit V A W ℃/W ℃ .kexin..cn 1 SMD Type P-Channel MOSFET 2SJ9435 - Electrical Characteristics (TJ =25°C, unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance (Note 1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 1) Gate Source Charge Gate Drain Charge Turn-On Delay Time (Note 1) Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf trr Qrr VSD Test Conditions ID=-250μA, VGS=0V VDS=-30V, VGS=0V VDS=0V, VGS=±20V VDS=VGS , ID=-250μA VGS=-10V, ID=-4A VGS=-4.5V, ID=-2A VGS=0V, VDS=-25V, f=1MHz VGS=-4.5V, VDS=-25V, ID=-4A VGS=-10V, VDS=-15V, ID=1A, RG=3.3Ω,RD=15Ω Is=-4A, VGS=0V,d I/dt=100A/μs IS=-1A,VGS=0V Notes 1. Pulse width ≤300µs , duty cycle ≤2%. - Marking Marking Tra Mn Osi Sst Fo Ers T Min Typ Max...