Datasheet4U Logo Datasheet4U.com

BSS87 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 200V.
  • ID = 0.28 A (VGS = 10V).
  • RDS(ON) ＜ 6Ω (VGS = 10V).
  • High-speed switching d.
  • No secondary breakdown. g 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source s.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS87 200V N-channel vertical D-MOS transistor NXP
BSS87 N-channel enhancement mode vertical D-MOS transistor Philips
BSS87 200V N-Channel MOSFET VBsemi
BSS87 Small-Signal Transistor Siemens
BSS87 Small-Signal-Transistor Infineon

Other Datasheets by Kexin Semiconductor

Part Number Description
BSS80 PNP Silicon Switching Transistors
BSS80B PNP Silicon Switching Transistors
BSS80C PNP Silicon Switching Transistors
BSS81 NPN Silicon Switching Transistors
BSS81B NPN Silicon Switching Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET BSS87 (KSS87) MOSFET ■ Features ● VDS (V) = 200V ● ID = 0.28 A (VGS = 10V) ● RDS(ON) ＜ 6Ω (VGS = 10V) ● High-speed switching d ● No secondary breakdown. g 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source s ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 200 ±20 0.28 1.