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NDT20N06 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 16.8 A (VGS = 10V).
  • RDS(ON) ＜ 63mΩ (VGS = 10V).
  • Low Gate Charge (Typ.11.5 nC).
  • Low Crss (Typ. 25 pF) G D .
  • .
  •  S + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain.
  • Absolute Maximu.

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SMD Type N-Channel MOSFET NDT20N06 MOSFET ■ Features ● VDS (V) = 60V ● ID = 16.8 A (VGS = 10V) ● RDS(ON) ＜ 63mΩ (VGS = 10V) ● Low Gate Charge (Typ.11.5 nC) ● Low Crss (Typ. 25 pF) G D       S + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derate above 25°C Thermal Resistance.