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NDT2N60 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 2 A (VGS = 10V).
  • RDS(ON) ＜ 4.5Ω (VGS = 10V).
  • Low Gate Charge.
  • Low Reverse transfer capacitances TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 0.15 1 .5 0 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +0 5.55 .15 -0.15 + 0.2 9 .7 0 -0.2 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source 4 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Sour.

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SMD Type N-Channel MOSFET NDT2N60 MOSFET ■ Features ● VDS (V) = 600V ● ID = 2 A (VGS = 10V) ● RDS(ON) ＜ 4.5Ω (VGS = 10V) ● Low Gate Charge ● Low Reverse transfer capacitances TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 0.15 1 .5 0 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +0 5.55 .15 -0.15 + 0.2 9 .7 0 -0.2 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source 4 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Gate source ESD (HBM-C= 100pF, R=1.