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NDT2N60P - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 2 A (VGS = 10V).
  • RDS(ON) ＜ 4.5Ω (VGS = 10V).
  • Low Gate Charge.
  • Low Reverse transfer capacitances TO-251 6.50±0.15 5.30±0.10 2.30±0.10 0.58 (max) 0.43 (min) Unit:mm 1.50±0.15 5.55±0.15 123 0.80±0.10 7.70±0.20 0.60±0.10 2.30(typ) 4.60±0.10 0.58 (max) 0.43 (min) 1.20±0.15.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Continuous Drain Current Pulsed Drain C.

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DIP Type MOSFET N-Channel MOSFET NDT2N60P ■ Features ● VDS (V) = 600V ● ID = 2 A (VGS = 10V) ● RDS(ON) ＜ 4.5Ω (VGS = 10V) ● Low Gate Charge ● Low Reverse transfer capacitances TO-251 6.50±0.15 5.30±0.10 2.30±0.10 0.58 (max) 0.43 (min) Unit:mm 1.50±0.15 5.55±0.15 123 0.80±0.10 7.70±0.20 0.60±0.10 2.30(typ) 4.60±0.10 0.58 (max) 0.43 (min) 1.20±0.15 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy ,Repetitive Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Thermal Resistance.Junction- to-Ambient Thermal Resistance.