NDT2N60P Datasheet N-channel MOSFET

Manufacturer: Kexin Semiconductor

Overview: DIP Type MOSFET N-Channel MOSFET NDT2N60P ■.

Datasheet Details

s.
VDS (V) = 600V.
ID = 2 A (VGS = 10V).
RDS(ON) ＜ 4.5Ω (VGS = 10V).
Low Gate Charge.
Low Reverse transfer capacitances TO-251 6.50±0.15 5.30±0.10 2.30±0.10 0.58 (max) 0.43 (min) Unit:mm 1.50±0.15 5.55±0.15 123 0.80±0.10 7.70±0.20 0.60±0.10 2.30(typ) 4.60±0.10 0.58 (max) 0.43 (min) 1.20±0.15.
Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Continuous Drain Current Pulsed Drain C.