Kexin Electronics NDT2N60P
N-Channel MOSFET
| Part No. | NDT2N60P |
|---|---|
| Datasheet | NDT2N60P Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 600V● ID = 2 A (VGS = 10V)
● RDS(ON) ＜ 4.5Ω (VGS = 10V)
● Low Gate Charge
● Low Reverse transfer capacitances TO-251 6.50±0.15 5.30±0.10 2.30±0.10 0.58 (max) 0.43 (min) Unit:mm 1.50±0.15 5.55±0.15 123 0.80±0.10 7.70±0.20 0.60±0.10 2.30(typ) 4.60±0.10 0.58 (max) 0.43 (min) 1.20±0.15
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy ,Repetitive Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature MaximumTemperature for Soldering Storage Temperature Range Tc=100 ℃ (Note.1) (Note.2) Note.1:L=10mH, ID=4A, Start TJ=25℃ Note.2:ISD =2A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ Symbol VDS VGS VESD ID IDM IAR EAR EAS dv/dt PD RthJA RthJL TJ TL Tstg Rating 600 ±30 3000 2 1.45 8 1.
