Kexin Electronics NDT25N06
N-Channel MOSFET
FEATURES
● VDS (V) = 60V● ID = 25 A (VGS = 10V)
● RDS(ON) < 65mΩ (VGS = 10V)
● High Current Capability
● Low Gate Charge 2.Drain 1.Gate +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +0 1.50 .15 -0.15 3.80 +0 5.55 .15 -0.15 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source 3.Source
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage (RGS=20kΩ) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (Note.1) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Tc=25℃ Tc=100℃ Note.1: starting TJ =25°C, ID =25A, VDD =25 V Symbol VDS VDGR VGS ID IDM PD EAS RthJA RthJC TJ Tstg Rating 60 60 ±20 25 17 100 41 100 100 3 150 -65 to 150 Unit V A W mJ ℃/W ℃ 1 SMD Type MOSFET N-Channel MOSFET NDT25N06● El...