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NDT25N15 - N-Channel MOSFET

Key Features

  • ƽ VDS (V) = 150V ƽ ID = 25 A @ VGS = 10V ƽ ID = 23 A @ VGS = 6V ƽ RDS(ON) < 0.052Ÿ @ VGS = 10V ƽ RDS(ON) < 0.060Ÿ @ VGS = 6V ƽ 175 ć Junction Temperature ƽ PWM Optimized TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm 3.80 + 5.55 0.15 -0.15 + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 +0 9.70 .2 -0.2 0.80+0.1 -0.1 0.127 m ax D 2.3 0.60+ 0.1 - 0.1 1 Gate 4 .60 +0.15 -0.15 2 Drain 3 Source 4 Drain G S Ƶ Absolute Max.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type TraMnOsiSsFtoErsT N-Channel MOSFET NDT25N15 Ƶ Features ƽ VDS (V) = 150V ƽ ID = 25 A @ VGS = 10V ƽ ID = 23 A @ VGS = 6V ƽ RDS(ON) < 0.052Ÿ @ VGS = 10V ƽ RDS(ON) < 0.060Ÿ @ VGS = 6V ƽ 175 ć Junction Temperature ƽ PWM Optimized TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm 3.80 + 5.55 0.15 -0.15 + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 +0 9.70 .2 -0.2 0.80+0.1 -0.1 0.127 m ax D 2.3 0.60+ 0.1 - 0.1 1 Gate 4 .60 +0.15 -0.