Kexin Electronics NDT40P04
P-Channel MOSFET
FEATURES
● VDS (V) =-40V● ID =-40 A (VGS =-10V)
● RDS(ON) < 14mΩ (VGS =-10V)
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Pulsed Drain Current Power Dissipation Derating factor Single Pulse Avalanche Energy (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD EAS RthJC TJ Tstg Rating -40 ±20 -40 -25 -50 80 0.53 544 1.88 175 -55 to 175 Note.1:EAS condition:...