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NDT40P04 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-40V.
  • ID =-40 A (VGS =-10V).
  • RDS(ON) ＜ 14mΩ (VGS =-10V).
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain.
  • Absolute.

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SMD Type MOSFET P-Channel MOSFET NDT40P04 ■ Features ● VDS (V) =-40V ● ID =-40 A (VGS =-10V) ● RDS(ON) ＜ 14mΩ (VGS =-10V) ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Pulsed Drain Current Power Dissipation Derating factor Single Pulse Avalanche Energy (Note.1) Thermal Resistance.