Kexin Electronics NDT4N20L
N-Channel MOSFET
| Part No. | NDT4N20L |
|---|---|
| Datasheet | NDT4N20L Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 200V● ID = 1 A (VGS = 10V)
● RDS(ON) ＜ 1.5Ω (VGS = 10V)
● RDS(ON) ＜ 1.55Ω (VGS = 5V)
● Low gate charge SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Tc=25℃ Tc=70℃ Avalanche Current, Repetetive Or Not Repetetive Power Dissipation Single Pulse Avalanche Energy (Note.1) Tc=25℃ Peak Diode Recovery Voltage Slope (Note.2) Thermal Resistance.Junction- to-Ambient (Note.3) Thermal Resistance.Junction- to-Case (Note.4) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAR PD EAS dv/dt RthJA RthJC TJ Tstg Note.1:Starting Tj = 25 °C, ID = IAR, VDD = 50 V. Note.2: Isd ≤ 1 A, di/dt ≤ 200 A/μs, VDD ≤ 80% V(BR)DSS. Note.3: When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t > 10 sec). Note.4: When mounted on 1 inch² FR-4 board, 2 oz.
