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NDT4N20L - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 200V.
  • ID = 1 A (VGS = 10V).
  • RDS(ON) ＜ 1.5Ω (VGS = 10V).
  • RDS(ON) ＜ 1.55Ω (VGS = 5V).
  • Low gate charge SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Tc=25℃ Tc=70℃ Avalanche Current, Repete.

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SMD Type N-Channel MOSFET NDT4N20L MOSFET ■ Features ● VDS (V) = 200V ● ID = 1 A (VGS = 10V) ● RDS(ON) ＜ 1.5Ω (VGS = 10V) ● RDS(ON) ＜ 1.55Ω (VGS = 5V) ● Low gate charge SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Tc=25℃ Tc=70℃ Avalanche Current, Repetetive Or Not Repetetive Power Dissipation Single Pulse Avalanche Energy (Note.1) Tc=25℃ Peak Diode Recovery Voltage Slope (Note.2) Thermal Resistance.Junction- to-Ambient (Note.3) Thermal Resistance.Junction- to-Case (Note.