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NDT4N60 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 3.9 A (VGS = 10V).
  • RDS(ON) ＜ 1.2Ω (VGS = 10V).
  • Low effective output capacitance +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +0 1.50 .15 -0.15 3.80 +0 5.55 .15 -0.15 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Vol.

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SMD Type N-Channel MOSFET NDT4N60 MOSFET ■ Features ● VDS (V) = 600V ● ID = 3.9 A (VGS = 10V) ● RDS(ON) ＜ 1.2Ω (VGS = 10V) ● Low effective output capacitance +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +0 1.50 .15 -0.15 3.80 +0 5.55 .15 -0.15 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Tc=25℃ Tc=70℃ Single Pulsed Avalanche Energy (Note.1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Tc=25℃ - Derate above 25°C Thermal Resistance.