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NDT4N65P - N-Channel Enhancement MOSFET

Key Features

  • ƽ VDS (V) = 650V ƽ ID = .0 A (VGS = 10V) ƽ RDS(ON) ˘ 3¡ (VGS = 10V) 72 D 1 23 G S  Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current (.
  • a) (.
  • a) Ta=25ć Ta=100ć Power Dissipation Single Pulsed Avalanche Energy Ta=25ć Derate above 25ć (.
  • b) Repetitive Avalanche Energy (.
  • a) Peak Diode Recovery dv/dt (.
  • c) Thermal Resistance. Junction- to-Ambient Therm.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIP Type N-Channel Enhancement MOSFET NDT4N65P (KDT4N65P) MOSFET Ƶ Features ƽ VDS (V) = 650V ƽ ID = .0 A (VGS = 10V) ƽ RDS(ON) ˘ 3¡ (VGS = 10V) 72 D 1 23 G S  Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current ( *a) ( *a) Ta=25ć Ta=100ć Power Dissipation Single Pulsed Avalanche Energy Ta=25ć Derate above 25ć ( *b) Repetitive Avalanche Energy ( *a) Peak Diode Recovery dv/dt ( *c) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Thermal Resistance.