Kexin Electronics NDT4N65P
N-Channel Enhancement MOSFET
| Part No. | NDT4N65P |
|---|---|
| Datasheet | NDT4N65P Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
ƽ VDS (V) = 650V ƽ ID = .0 A (VGS = 10V) ƽ RDS(ON) ˘ 3¡ (VGS = 10V) 72 D 1 23 G S ƵABSOLUTE MAXIMUM RATINGS
Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current ( *a) ( *a) Ta=25ć Ta=100ć Power Dissipation Single Pulsed Avalanche Energy Ta=25ć Derate above 25ć ( *b) Repetitive Avalanche Energy ( *a) Peak Diode Recovery dv/dt ( *c) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Thermal Resistance.Case-to-Sink Typ Maximum lead Temperature for soldering purpose, 1/8 from case for 5 seconds Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAR PD EAS EAR dv/dt RthJA RthJC RthJS TL TJ Tstg Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature b.IAS=4.5A,VDD=50V,RG=25ȍ,Starting TJ=25ć...
